In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

This book serves as a comprehensive reference and graduate-level text on Semiconductor Heteroepitaxy -the crystal growth of semiconductor layers on dissimilar substrates for the purpose of making modern semiconductor devices including high-speed transistors, lasers and detectors, digital circuits, photovoltaic cells, solid-state lighting, and sensors. Semiconductor Heteroepitaxy has become increasingly important as an enabling technology for computing, communication, energy, lighting, and control systems. The first edition remains the top book in the field because of its comprehensive treatment and focus on principles. This newest edition includes two entirely new chapters on metamorphic buffers and devices.